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参数资料
| 型号： | 2SC4689-O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 134K |
| 代理商： | 2SC4689-O |
2SC4689
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4689
Power Amplifier Applications
Complementary to 2SA1804
Suitable for use in 55-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
DC
IC
8
Collector current
Pulse
ICP
16
A
Base current
IB
0.8
A
Collector power dissipation
(Tc = 25°C)
PC
70
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4689-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC4690-O(F) | 功能描述:两极晶体管 - BJT Transistor NPN 140V 10A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4690-R(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3P(N)IS |
| 2SC4691 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4691J0L | 功能描述:TRANS NPN 40VCES 100MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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