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参数资料
| 型号： | 2SC4691G-R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSMINI3-F3, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 195K |
| 代理商： | 2SC4691G-R |
Transistors
1
Publication date: May 2007
SJC00394AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4691G
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 40 V, I
E
= 0
0.1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
0.1
A
Forward current transfer ratio *
hFE
VCE = 1 V, IC = 10 mA
60
200
Collector-emitter saturation voltage
VCE(sat)
IC
= 10 mA, I
B
= 1 mA
0.17
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC = 10 mA, IB = 1 mA
1.0
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
450
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2
6
pF
(Common base, input open circuited)
Turn-on time
ton
Refer to the measurement circuit
17
ns
Turn-off time
toff
17
ns
Storage time
tstg
10
ns
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
40
V
Collector-emitter voltage (E-B short)
VCES
40
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
100
mA
Peak collector current
ICP
300
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
No-rank
hFE
60 to 120
90 to 200
60 to 200
Product of no-rank is not classified and have no indication for rank.
■ Package
Code
SSMini3-F3
Marking Symbol: 2Y
Pin Name
1. Base
2. Emitter
3. Collector
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