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参数资料
| 型号： | 2SC4692 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3PFM, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 32K |
| 代理商： | 2SC4692 |
2SC4692
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
1500
V
Collector to emitter voltage
V
CEO
800
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
12
A
Collector surge current
I
C (surge)
20
A
Collector power dissipation
P
C*
1
50
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
800
—
V
I
C = 10 mA, RBE = _
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CES
—
500
A
V
CE = 1500 V, RBE = 0
DC current transfer ratio
h
FE
15
—
35
V
CE = 5 V, IC = 1 A
Collector to emitter saturation
voltage
V
CE (sat)
——5
V
I
C = 10 A, IB = 2 A
Base to emitter saturation
voltage
V
BE (sat)
—
1.5
V
I
C = 10 A, IB = 2 A
Fall time
t
f
—
0.5
s
I
CP = 8 A, IB1 = 1.4 A,
I
B2 = –2.5 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4694-TL-E | 制造商:ON Semiconductor 功能描述: |
| 2SC4703-AZ | 功能描述:RF TRANSISTOR NPN SOT-89 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:6GHz 噪声系数（dB，不同 f 时的典型值）:2.3dB @ 1GHz 增益:8.3dB 功率 - 最大值:1.8W 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 50mA，5V 电流 - 集电极（Ic）（最大值）:150mA 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1 |
| 2SC4703-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4703-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.15A,P-MiniMold3 制造商:Renesas 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| 2SC4703-T1-AZ-SE | 制造商:Renesas Electronics Corporation 功能描述: |
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