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参数资料
| 型号： | 2SC4702 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封装： | MPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 29K |
| 代理商： | 2SC4702 |
2SC4702
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
300
V
Collector to emitter voltage
V
CEO
300
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
300
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.1
AV
CB = 250 V, IE = 0
Collector to emitter saturation
voltage
V
CE(sat)
—
0.5
V
I
C = 30 mA, IB = 3 mA
DC current transfer ratio
h
FE
60
—
150
V
CE = 6 V, IC = 2 mA
Gain bandwidth product
f
T
—
80
—
MHz
V
CE = 6 V, IC = 5 mA
Collector output capacitance
Cob
—
1.5
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4703-AZ | 功能描述:RF TRANSISTOR NPN SOT-89 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:6GHz 噪声系数（dB，不同 f 时的典型值）:2.3dB @ 1GHz 增益:8.3dB 功率 - 最大值:1.8W 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 50mA，5V 电流 - 集电极（Ic）（最大值）:150mA 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1 |
| 2SC4703-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4703-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.15A,P-MiniMold3 制造商:Renesas 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| 2SC4703-T1-AZ-SE | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4703-T1-AZ-SF | 制造商:Renesas Electronics Corporation 功能描述: |
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