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参数资料
| 型号： | 2SC4754 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10S1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 190K |
| 代理商： | 2SC4754 |
2SC4754
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4754
High-Voltage Switching Applications
High-Speed DC-DC Converter and Switching Regulator
Applications
Excellent switching times: tr = 1.0 s (max)
tf = 1.0 s (max), (IC = 0.8 A)
High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
2
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1A
Weight: 1.5 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4754(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC4774 T106S | 制造商:ROHM Semiconductor 功能描述: |
| 2SC4774T106 | 制造商:ROHM Semiconductor 功能描述: |
| 2SC4774T106R | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 2SC4774T106R |
| 2SC4774T106S | 功能描述:两极晶体管 - BJT NPN 6V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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