参数资料
型号: 2SC4805G-R
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, SMINI3-F2, 3 PIN
文件页数: 1/4页
文件大小: 249K
代理商: 2SC4805G-R
Transistors
1
Publication date: May 2007
SJC00367AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Features
High transition frequency f
T
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 01
A
Forward current transfer ratio *
hFE
VCE = 8 V, IC = 20 mA
50
300
Transition frequency
fT
VCE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
7.0
8.5
GHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
0.6
1.0
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
7
9
dB
Maximum unilateral power gain
GUM
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
10
dB
Noise figure
NF
VCE
= 8 V, I
C
= 7 mA, f = 1.5 GHz
2.2
3.0
dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
2V
Collector current
IC
65
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
hFE
50 to 120
100 to 170
150 to 300
50 to 300
Marking symbol
3SQ
3SR
3SS
3S
Product of no-rank is not classified and have no indication for rank.
■ Package
Code
SMini3-F2
Marking Symbol: 3S
Pin Name
1: Base
2: Emitter
3: Collector
相关PDF资料
PDF描述
2SC4807 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4808G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4809G HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4814-AZ 2.5 A, 100 V, NPN, Si, POWER TRANSISTOR
2SC4814-AZ 2.5 A, 100 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SC4807ERTR-E 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Cut Tape
2SC4808 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC4808G0L 功能描述:TRANS NPN 10VCEO 80MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿(最大):4.7V 频率 - 转换:47GHz 噪声系数(dB典型值@频率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA,3V 电流 - 集电极 (Ic)(最大):45mA 安装类型:表面贴装 封装/外壳:4-SMD,扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR
2SC4808J0L 功能描述:TRANS NPN 10VCEO 80MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿(最大):4.7V 频率 - 转换:47GHz 噪声系数(dB典型值@频率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA,3V 电流 - 集电极 (Ic)(最大):45mA 安装类型:表面贴装 封装/外壳:4-SMD,扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR
2SC4809J0L 功能描述:TRANS NPN 10VCEO 50MA SSMINI-3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR