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参数资料
| 型号： | 2SC4813 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 169K |
| 代理商： | 2SC4813 |
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1998
Document No. D15603EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4813
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat).
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Low VCE(sat): VCE(sat)
≤ 0.3 V
@IC = 3.0 A, IB = 30 mA
High hFE:
hFE = 450 to 2,000 @VCE = 2.0 V, IC = 3.0 A
On-chip dumper-diode
Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±7.5
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms, duty cycle ≤ 2%
±10
A
Base current (DC)
IB(DC)
2.0
A
Total power dissipation
PT
Ta = 25
°C
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4813-AZ | 7.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SC4815-K-AZ | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SC4815-K | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SC4815-AZ | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SC4815-K-AZ | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4815-T-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin MP-10 T/R |
| 2SC4815-T-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4815-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4820 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 6A 30W BCE |
| 2SC4833-4000 | 功能描述:两极晶体管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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