参数资料
型号: 2SC4835GR
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, SMINI3-F2, 3 PIN
文件页数: 1/4页
文件大小: 284K
代理商: 2SC4835GR
Transistors
1
Publication date: May 2007
SJC00368AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4835G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
Low noise figure NF
High forward transfer gain S
21e
2
High transition frequency f
T
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 015
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 010
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 2 V, I
C
= 01
A
Forward current transfer ratio *
1, 2
hFE
VCE = 8 V, IC = 20 mA
50
200
Transition frequency
fT
VCE = 8 V, IC = 15 mA, f = 800 MHz
5
6
GHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
0.7
1.2
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2 V
CE
= 8 V, I
C
= 15 mA, f = 800 MHz
11
14
dB
Maximum unilateral power gain
GUM
VCE = 8 V, IC = 15 mA, f = 800 MHz
15
dB
Noise figure
NF
VCE = 8 V, IC = 7 mA, f = 800 MHz
1.3
2.0
dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
2V
Collector current
IC
80
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
50 to 100
80 to 130
100 to 200
■ Package
Code
SMini3-F2
Marking Symbol: 3M
Pin Name
1: Base
2: Emitter
3: Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SC4840TE85R UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4841TE85L UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4844 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4853A C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4853A3 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC4837S-AY 功能描述:两极晶体管 - BJT VHF TO UHF WIDEBAND AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC485 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-39100V 1.5A .8W
2SC4851-TL-E 制造商:SANYO 功能描述:mom 15V 0.1A 800 to 3200 MCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS NPN 15V 0.1A SOT323 制造商:Sanyo 功能描述:0
2SC4853A-4-TL-E 功能描述:两极晶体管 - BJT BIP NPN 15MA 5V FT=5G RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4881(CANO,F,M) 功能描述:TRANS NPN 5A 50V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极(Ic)(最大值):5A 电压 - 集射极击穿(最大值):50V 不同?Ib,Ic 时的?Vce 饱和值(最大值):400mV @ 125mA,2.5A 电流 - 集电极截止(最大值):1μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):100 @ 1A,1V 功率 - 最大值:2W 频率 - 跃迁:100MHz 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1