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参数资料
| 型号： | 2SC4835R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SMINI3-G1, SC-70, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 116K |
| 代理商： | 2SC4835R |
Transistors
1
Publication date: February 2003
SJC00172BED
2SC4835
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
Low noise figure NF
High forward transfer gain S
21e
2
High transition frequency f
T
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 015
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 010
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 2 V, I
C
= 01
A
Forward current transfer ratio *
1, 2
hFE
VCE = 8 V, IC = 20 mA
50
200
Transition frequency
fT
VCE = 8 V, IC = 15 mA, f = 800 MHz
5
6
GHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
0.7
1.2
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2 V
CE
= 8 V, I
C
= 15 mA, f = 800 MHz
11
14
dB
Maximum unilateral power gain
GUM
VCE = 8 V, IC = 15 mA, f = 800 MHz
15
dB
Noise figure
NF
VCE = 8 V, IC = 7 mA, f = 800 MHz
1.3
2.0
dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
2V
Collector current
IC
80
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Marking Symbol: 3M
2.1
±
0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0
to
0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
10
1: Base
2: Emitter
3:Collector
EIAJ: SC-70
SMini3-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
50 to 100
80 to 130
100 to 200
This product complies with the RoHS Directive (EU 2002/95/EC).
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