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参数资料
| 型号： | 2SC4915-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2H1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 285K |
| 代理商： | 2SC4915-Y |
2SC4915
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4915
High Frequency Amplifier Applications
FM, RF, MIX, If Amplifier Applications
Small reverse transfer capacitance: Cre = 0.55 pF (typ.)
Low noise figure: NF = 2.3dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
Base current
IB
4
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0 A
0.1
μA
Emitter cut-off current
IEBO
VEB = 4 V, IC = 0 A
0.5
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 1 mA
40
200
Reverse transfer capacitance
Cre
VCB = 6 V, f = 1 MHz
0.55
pF
Transition frequency
fT
VCE = 6 V, IC = 1 mA
260
550
MHz
Collector-base time constant
Ccrbb’
VCE = 6 V, IE = 1 mA, f = 30 MHz
20
ps
Noise figure
NF
2.3
5.0
dB
Power gain
Gpe
VCC = 6 V, IE = 1 mA,
f
= 100 MHz, Figure 1
17
23
dB
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
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