- 您现在的位置：买卖IC网 > PDF目录30562 > 2SC4942-AA1-AZ 1 A, 600 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC4942-AA1-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 115K |
| 代理商： | 2SC4942-AA1-AZ |
1998
Document No. D16152EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SC4942
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SC4942 is a transistor developed for high-speed high-
voltage switching. This transistor is ideal for use in switching
devices such as switching regulators and DC/DC converters.
FEATURES
New package with dimensions in between those of small
signal and power signal package
High voltage
Fast switching speed
Complementary transistor with the 2SA1871
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
600
V
Collector to emitter voltage
VCEO
600
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
ID(DC)
1.0
A
Collector current (pulse)
ID(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
2.0
A
Total power dissipation
PT
7.5 cm
2
× 0.7 mm ceramic board mounted
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Electrode connection
1. Emitter
2. Collector
3. Base
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4942-AA3-AZ | 1 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 2SC4942-AA2 | 1 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 2SC4944-GR | 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4954-T82 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4954-T2T82 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4942-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,600V,1.0A,MP-2 制造商:Renesas 功能描述:0 |
| 2SC4942-T1-AZ-AA2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4942-T1-AZ-AA3 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4944-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4944-GR(TE85L,F | 功能描述:两极晶体管 - BJT 150mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。