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参数资料
| 型号： | 2SC4995 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CMPAK-4 |
| 文件页数： | 7/12页 |
| 文件大小： | 173K |
| 代理商： | 2SC4995 |
2SC4995
Rev.3.00, Apr.05.2004, page 2 of 9
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown voltage V(BR)CBO
15
——V
IC = 10
A, IE = 0
ICBO
——10
AVCB = 12 V, IE = 0
Collector cutoff current
ICEO
——1
mA
VCE = 8 V, RBE = ∞
Emitter cutoff current
IEBO
——10
AVEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
120
250
VCE = 5 V, IC = 20 mA
Collector output capacitance
Cob
—
0.55
1.1
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
8.0
11.0
—
GHz
VCE = 5 V, IC = 20 mA
S21 Parameter
|S21|
—
16
—
dB
VCE = 5 V, IC = 20 mA,
f = 1000 MHz
Power gain
PG
13.5
16.5
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.1
2.0
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4995YD(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5000 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5000(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC5000_04 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5001 | 制造商:ROHM 制造商全称:Rohm 功能描述:Low Vce(sat) Transistor (Strobe flash) (-20V, -10A) |
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