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参数资料
| 型号： | 2SC5000 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 111K |
| 代理商： | 2SC5000 |
2SC5000
2004-07-26
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
10
A
Base current
IB
1
A
Collector power dissipation
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 70 V, IE = 0
―
1
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
1
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
―
V
DC current gain
hFE (1)
VCE = 1 V, IC = 1 A
120
―
400
Collector-emitter
VCE (sat)
IC = 5 A, IB = 0.25 A
―
0.19
0.4
Saturation voltage
Base-emitter
VBE (sat)
IC = 5 A, IB = 0.25 A
―
0.96
1.4
V
Transition frequency
fT
VCE = 1 V, IC = 1 A
―
90
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
90
―
pF
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
C5000
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5000(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC5000_04 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5001 | 制造商:ROHM 制造商全称:Rohm 功能描述:Low Vce(sat) Transistor (Strobe flash) (-20V, -10A) |
| 2SC5001F5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-252 |
| 2SC5001F5Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-252 |
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