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参数资料
| 型号： | 2SC5006 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 1/10页 |
| 文件大小： | 52K |
| 代理商： | 2SC5006 |
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10385EJ2V0DS00 (2nd edition)
(Previous No. TD-2399)
Date Published July 1995 P
Printed in Japan
2SC5006
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
Low Voltage Use.
High fT
: 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
Low Cre
: 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
Low NF
: 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5006
50 pcs./Unit
2SC5006-T1
3 kpcs./Reel
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
125
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–60 to +150
C
1.6 ± 0.1
0.8 ± 0.1
1.6
±
0.1
1.0
0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75
±
0.05
0.6
0
to
0.1
0.15
+0.1
–0.05
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5006-T1 | RF SMALL SIGNAL TRANSISTOR |
| 2SC5007FB | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5008-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5008-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5010-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5006(NE85619) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5006-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:4.5GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 1GHz 增益:9dB 功率 - 最大值:125mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:80 @ 7mA，3V 电流 - 集电极（Ic）（最大值）:100mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:- 标准包装:1 |
| 2SC5006-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5006-T1-A | 制造商:Renesas Electronics Corporation 功能描述:NPN SMALL SIGNAL AMPLIFIER 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 12V 0.1A 3-Pin Ultra Super Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,US-MiniMold3 制造商:Renesas 功能描述:Trans GP BJT NPN 12V 0.1A 3-Pin Ultra Super Mini-Mold T/R |
| 2SC5006-T1-A(FB) | 制造商:Renesas Electronics 功能描述:NPN |
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