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参数资料
| 型号： | 2SC5010-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 52K |
| 代理商： | 2SC5010-FB |
1997 Mar 25
3
Philips Semiconductors
Product specication
NPN general purpose transistor
2N4124
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
200
mA
ICM
peak collector current
300
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB =3V
50
nA
hFE
DC current gain
IC = 2 mA; VCE = 1 V; note 1
120
360
IC = 50 mA; VCE = 1 V; note 1
60
VCEsat
collector-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
300
mV
VBEsat
base-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
950
mV
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
4pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
8pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz
300
MHz
F
noise gure
IC = 100 A; VCE =5V; RS =1k
f = 10 Hz to 15.7 kHz
5dB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5010-T1 | 制造商:NEC Electronics Corporation 功能描述:2SC5010-T1 |
| 2SC5010-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,6V,30mA,US-MiniMold3 制造商:Renesas 功能描述:GP BJT |
| 2SC5010-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5011 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011(NE85618) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
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