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参数资料
| 型号： | 2SC5010-T1FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 6/8页 |
| 文件大小： | 52K |
| 代理商： | 2SC5010-T1FB-A |
2SK1590A
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5011FB | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5011GB | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5011GB | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5011 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5011EB | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5011 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011(NE85618) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5011-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:6.5GHz 噪声系数（dB，不同 f 时的典型值）:1.1dB @ 1GHz 增益:13dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 20mA，10V 电流 - 集电极（Ic）（最大值）:100mA 安装类型:表面贴装 封装/外壳:SC-82A，SOT-343 供应商器件封装:- 标准包装:1 |
| 2SC5011-T1 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011-T1-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:6.5GHz 噪声系数（dB，不同 f 时的典型值）:1.1dB @ 1GHz 增益:13dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 20mA，10V 电流 - 集电极（Ic）（最大值）:100mA 安装类型:表面贴装 封装/外壳:SC-82A，SOT-343 供应商器件封装:SOT-343 标准包装:3,000 |
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