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参数资料
| 型号： | 2SC5010 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 1/10页 |
| 文件大小： | 52K |
| 代理商： | 2SC5010 |
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10389EJ2V0DS00 (2nd edition)
(Previous No. TD-2401)
Date Published July 1995 P
Printed in Japan
2SC5010
DESCRIPTION
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an
NEC proprietary fabrication technique.
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
FEATURES
Low Voltage Use.
High fT
: 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
Low Cre
: 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
Low NF
: 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)
High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5010
50 pcs/Unit.
2SC5010-T1
3 kpcs/Reel.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
125
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
Embossed tape 8 mm wide.
Pin3(Collector) face to perforation side
of the tape.
PACKAGE DIMENSIONS
in milimeters
1.6 ± 0.1
0.8 ± 0.1
1.6
±
0.1
1.0
0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75
±
0.05
0.6
0
to
0.1
0.15
+0.1
–0.05
1. Emitter
2. Base
3. Collector
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5013-T1GB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-GB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T2EB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5010(NE68519) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5010-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:6V 频率 - 跃迁:12GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 2GHz 增益:8.5dB 功率 - 最大值:125mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:75 @ 10mA，3V 电流 - 集电极（Ic）（最大值）:30mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:- 标准包装:1 |
| 2SC5010-T1 | 制造商:NEC Electronics Corporation 功能描述:2SC5010-T1 |
| 2SC5010-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,6V,30mA,US-MiniMold3 制造商:Renesas 功能描述:GP BJT |
| 2SC5010-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
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