参数资料
型号: 2SC5012-FB
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: SUPER MINIMOLD PACKAGE-4
文件页数: 4/4页
文件大小: 183K
代理商: 2SC5012-FB
Data Sheet PU10504EJ01V0DS
2
2SC5012
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
1.0
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
1.0
A
DC Current Gain
hFE
Note 1
VCE = 8 V, IC = 20 mA
50
100
250
RF Characteristics
Gain Bandwidth Product
fT
VCE = 8 V, IC = 20 mA
9.0
GHz
Insertion Power Gain
S21e2 VCE = 8 V, IC = 20 mA, f = 1.0 GHz
13
15
dB
Noise Figure
NF
VCE = 8 V, IC = 7 mA, f = 1.0 GHz
1.2
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1.0 MHz
0.25
0.8
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
EB
FB
GB
Marking
R36
R37
R38
hFE Value
50 to 100
80 to 160
125 to 250
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相关代理商/技术参数
参数描述
2SC5012-FB(T1) 制造商:Renesas Electronics Corporation 功能描述:
2SC5012-T1 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5012-T1-A 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:带卷(TR) 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):10V 频率 - 跃迁:9GHz 噪声系数(dB,不同 f 时的典型值):1.2dB @ 1GHz 增益:15dB 功率 - 最大值:150mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):50 @ 20mA,8V 电流 - 集电极(Ic)(最大值):65mA 安装类型:表面贴装 封装/外壳:SC-82A,SOT-343 供应商器件封装:SOT-343 标准包装:3,000
2SC5012-T2 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5013 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR