参数资料
型号: 2SC5013-EB-A
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SUPERMINI-4
文件页数: 3/6页
文件大小: 44K
代理商: 2SC5013-EB-A
2SC5013
3
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
Total
Power
Disspation
-
mW
TA - Ambient Temperature - C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
50
VBE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
30
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-
DC
Current
Gain
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
fT
-
Gain
Bandwidth
Product
-
GHz
IC - Collector Current - mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
|S
21e
|2
-
Insertion
Power
Gain
-
dB
1
IC - Collector Current - mA
200
100
50
100
150
0
0.5
1.0
0
40
30
20
10
VCE = 6 V
20
10
2
8
12
0
500
200
1
100
10
20
50
5
50
VCE = 6 V
12
10
1
8
0
2
6
5
10
50
VCE = 6 V
f = 1 GHz
12
0
8
5
10
20
50
VCE = 6 V
f = 2 GHz
4
6
10
2
10
20
2
20
4
A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
A
IB =
200
180
相关PDF资料
PDF描述
2SC5013-T1EB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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相关代理商/技术参数
参数描述
2SC5013-T1 制造商:RNS 功能描述:
2SC5013-T1-A 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:带卷(TR) 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):10V 频率 - 跃迁:10GHz 噪声系数(dB,不同 f 时的典型值):1.8dB @ 2GHz 增益:9.5dB 功率 - 最大值:150mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):50 @ 10mA,6V 电流 - 集电极(Ic)(最大值):35mA 安装类型:表面贴装 封装/外壳:SC-82A,SOT-343 供应商器件封装:SOT-343 标准包装:3,000
2SC5013-T2 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5014 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5014-T1 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD