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参数资料
| 型号： | 2SC5013-T1FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SUPERMINI-4 |
| 文件页数： | 2/6页 |
| 文件大小： | 44K |
| 代理商： | 2SC5013-T1FB-A |
2SC5013
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1 V, IC = 0
DC Current Gain
hFE
50
100
250
VCE = 6 V, IC = 10 mA*1
Gain Bandwidth Product
fT
10
GHz
VCE = 6 V, IC = 10 mA
Feed back Capacitance
Cre
0.25
0.8
pF
VCB = 10 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
7.5
9.5
dB
VCE = 6 V, IC = 10 mA,f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB
VCE = 6 V, IC = 5 mA,f = 2.0 GHz
*1 Pulse Measurement; PW
≤ 350
s, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
EB
FB
GB
Marking
R46
R47
R48
hFE
50 to 100
80 to 160
125 to 250
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5013-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-GB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T2EB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-EB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T1EB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5013-T2 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014-T1 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014-T2 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5015 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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