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参数资料
| 型号： | 2SC5013-T1FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SUPER MINIMOLD PACKAGE-4 |
| 文件页数： | 4/9页 |
| 文件大小： | 183K |
| 代理商： | 2SC5013-T1FB |
Data Sheet PU10518EJ01V0DS
2
2SC5013
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
1.0
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
1.0
A
DC Current Gain
hFE
Note 1
VCE = 6 V, IC = 10 mA
50
100
250
RF Characteristics
Gain Bandwidth Product
fT
VCE = 6 V, IC = 10 mA
10
–
GHz
Insertion Power Gain
S21e2 VCE = 6 V, IC = 10 mA, f = 2.0 GHz
7.5
9.5
dB
Noise Figure
NF
VCE = 6 V, IC = 5 mA, f = 2.0 GHz
1.8
3.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1.0 MHz
0.25
0.8
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
EB
FB
GB
Marking
R46
R47
R48
hFE Value
50 to 100
80 to 160
125 to 250
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| 2SC5013-T2 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5013-T2 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014-T1 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014-T2 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5015 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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