参数资料
型号: 2SC5013-T2
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 3/8页
文件大小: 44K
代理商: 2SC5013-T2
2SC5013
3
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
Total
Power
Disspation
-
mW
TA - Ambient Temperature - C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
50
VBE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
30
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-
DC
Current
Gain
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
fT
-
Gain
Bandwidth
Product
-
GHz
IC - Collector Current - mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
|S
21e
|2
-
Insertion
Power
Gain
-
dB
1
IC - Collector Current - mA
200
100
50
100
150
0
0.5
1.0
0
40
30
20
10
VCE = 6 V
20
10
2
8
12
0
500
200
1
100
10
20
50
5
50
VCE = 6 V
12
10
1
8
0
2
6
5
10
50
VCE = 6 V
f = 1 GHz
12
0
8
5
10
20
50
VCE = 6 V
f = 2 GHz
4
6
10
2
10
20
2
20
4
A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
A
IB =
200
180
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