参数资料
型号: 2SC5013EB
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: SUPER MINIMOLD PACKAGE-4
文件页数: 3/7页
文件大小: 57K
代理商: 2SC5013EB
Data Sheet PU10518EJ01V0DS
3
2SC5013
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC
Current
Gain
h
FE
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
2.0
1.0
1
0.5
0.1
0.2
510
20
50
f = 1 MHz
2
50
0.5
1.0
0
40
30
20
10
VCE = 6 V
30
20
10
28
12
0
46
10
A
A
A
A
A
A
A
A
A
A
160
140
120
100
80
60
40
20
IB =
200
180
500
200
1
100
10
20
50
550
VCE = 6 V
210
20
12
10
1
8
0
2
6
510
50
VCE = 6 V
f = 1 GHz
220
4
Remark The graphs indicate nominal characteristics.
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相关代理商/技术参数
参数描述
2SC5013-T1 制造商:RNS 功能描述:
2SC5013-T1-A 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:带卷(TR) 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):10V 频率 - 跃迁:10GHz 噪声系数(dB,不同 f 时的典型值):1.8dB @ 2GHz 增益:9.5dB 功率 - 最大值:150mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):50 @ 10mA,6V 电流 - 集电极(Ic)(最大值):35mA 安装类型:表面贴装 封装/外壳:SC-82A,SOT-343 供应商器件封装:SOT-343 标准包装:3,000
2SC5013-T2 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5014 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5014-T1 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD