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参数资料
| 型号： | 2SC5015-KB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SUPER MINIMOLD PACKAGE-4 |
| 文件页数： | 1/8页 |
| 文件大小： | 49K |
| 代理商： | 2SC5015-KB-A |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5015
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD (18)
Document No. PU10403EJ01V0DS (1st edition)
(Previous No. P10394EJ2V0DS00)
Date Published June 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1993, 2003
FEATURES
High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Low noise and high gain
Low voltage operation
4-pin super minimold (18) package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5015
50 pcs (Non reel)
8 mm wide embossed taping
2SC5015-T1
3 kpcs/reel
Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
Ptot
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5015-T1 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5015-T1-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:6V 频率 - 跃迁:12GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 2GHz 增益:11dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:75 @ 10mA，3V 电流 - 集电极（Ic）（最大值）:30mA 安装类型:表面贴装 封装/外壳:SC-82A，SOT-343 供应商器件封装:SOT-343 标准包装:1 |
| 2SC5015-T2 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5016 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5018 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching) |
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