参数资料
型号: 2SC5015-T2KB-A
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SUPERMINI-4
文件页数: 3/8页
文件大小: 43K
代理商: 2SC5015-T2KB-A
2SC5015
3
TYPICAL CHARACTERISTICS (TA = 25 C)
200
100
0
50
100
150
TA - Ambinet Temperatute - C
P
T
-
Total
Power
Dissipation
-
mW
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
40
0
0.5
1.0
VBE - Base to Emitter Voltafe - V
IC
-
Collector
Current
-
mA
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
30
20
10
VCE = 3 V
30
02
4
8
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
12
50
IC - Collector Current - mA
h
FE
-
DC
Current
Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
VCE = 3 V
220
50
IC - Collector Current - mA
fT
-
Gain
Bandwidth
Product
-
GHz
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
10
6
IB = 200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
VCE = 3 V
f = 2 GHz
IC - Collector Current - mA
|S
21a
|
2 -
Insertion
Power
Gain
-
dB
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
f = 2 GHz
200
100
50
20
10
510
20
14
12
10
8
6
4
2
0
1
5
10
2
20
50
12
0
15
10
8
6
4
2
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