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参数资料
| 型号： | 2SC5015-T2KB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/8页 |
| 文件大小： | 43K |
| 代理商： | 2SC5015-T2KB |
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10394EJ2V0DS00 (2nd edition)
(Previous No. TD-7938)
Date Published August 1995 P
Printed in Japan
2SC5015
FEATURES
Small Package
High Gain Bandwidth Product (fT = 12 GHz TYP.)
Low Noise, High Gain
Low Voltage Operation
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5015-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) faceto
perforation side of the tape.
2SC5015-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) faceto
perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Ti
150
C
Storage Temperature
Tstg
–65 to + 150
C
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
Caution: Electrostatic Sensitive Device
PACKAGE DIMENSIONS
in millimeters
T83
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
+0.1
–0.05
0.3
+0.1
–0.05
(1.3)
(1.25)
2.0
±
0.2
0.65
0.60
23
1
4
0.3
+0.1
–0.05
0.4
+0.1
–0.05
0.9
±
0.1
0.3
0 to 0.1
0.15
+0.1
–0.05
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
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| 2SC501900L | 功能描述:TRANS NPN HF 10VCEO 80MA MINIPWR RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
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