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参数资料
| 型号： | 2SC5050 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MPAK-3 |
| 文件页数： | 6/9页 |
| 文件大小： | 165K |
| 代理商： | 2SC5050 |
2SC5050
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
8V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
——V
I
C = 10 A, IE = 0
Collector cutoff current
I
CBO
—
10
A
V
CB = 12 V, IE = 0
I
CEO
——
1
mA
V
CE = 8 V, RBE =
Emitter cutoff current
I
EBO
—
10
A
V
EB = 1.5 V, IC = 0
DC current transfer ratio
h
FE
50
120
250
V
CE = 5 V, IC = 20 mA
Collector output capacitance
Cob
—
0.6
1.1
pF
V
CB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
8.0
11.0
—
GHz
V
CE = 5 V, IC = 20 mA
S21 Parameter
|S21|
—
13.5
—
dB
V
CE = 5 V, IC = 20 mA,
f = 1000 MHz
Power gain
PG
11.0
14.0
—
dB
V
CE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.1
2.0
dB
V
CE = 5 V, IC = 5 mA,
f = 900 MHz
See characteristic curves of 2SC4926.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5051 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC5051YZ-TR-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC5052 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) |
| 2SC5052O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 800MA I(C) | SC-71 |
| 2SC5052Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 800MA I(C) | SC-71 |
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