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参数资料
| 型号： | 2SC5079 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CMPAK-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 25K |
| 代理商： | 2SC5079 |
2SC5079
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
8V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CBO
——
10
AV
CB = 15 V, IE = 0
I
CEO
——
1
mA
V
CE = 8 V, RBE = ∞
Emitter cutoff current
I
EBO
——
10
AV
EB = 1.5 V, IC = 0
DC current transfer ratio
h
FE
50
120
160
V
CE = 5 V, IC = 10 mA
Collector output capacitance
Cob
—
0.3
0.8
pF
V
CB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
9
12
—
GHz
V
CE = 5 V, IC = 5 mA
Power gain
PG
14
17
20
dB
V
CE = 5 V, IC = 10 mA,
f = 900 MHz
Noise figure
NF
—
1.6
2.5
dB
V
CE = 5 V, IC = 5 mA,
f = 900 MHz
Note:
Marking is “ZC–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
See characteristic curves of 2SC5078.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC508 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC5080 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC5080ZD-TL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC5081 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC5081ZD-TL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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