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参数资料
| 型号： | 2SC5086FT-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1B1A, TESM, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 125K |
| 代理商： | 2SC5086FT-Y |
2SC5086FT
2003-08-08
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086FT
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Base current
IB
40
mA
Collector current
IC
80
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Microwave Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 10 V, IC = 20 mA
5
7
GHz
S21e
2 (1)
VCE = 10 V, IC = 20 mA, f = 500 MHz
16.5
Insertion gain
S21e
2 (2)
VCE = 10 V, IC = 20 mA, f = 1 GHz
7.5
11
dB
NF (1)
VCE = 10 V, IC = 5 mA, f = 500 MHz
1
Noise figure
NF (2)
VCE = 10 V, IC = 5 mA, f = 1 GHz
1.1
2
dB
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
(Note 1)
VCE = 10 V, IC = 20 mA
80
240
Output capacitance
Cob
1.0
pF
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
0.65
1.15
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5086FT | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5087-Y | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5087 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5088-O | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5088-Y | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5086O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | SOT-416 |
| 2SC5086-O(T5L，F，T) | 制造商:Toshiba America Electronic Components 功能描述:TRANS RF NPN 12V 1MHZ SSM |
| 2SC5086-O(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
| 2SC5086-O,LF | 功能描述:TRANS RF NPN 12V 1MHZ SSM 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:7GHz 噪声系数（dB，不同 f 时的典型值）:1dB @ 500MHz 增益:- 功率 - 最大值:100mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:80 @ 20mA，10V 电流 - 集电极（Ic）（最大值）:80mA 安装类型:表面贴装 封装/外壳:SC-75，SOT-416 供应商器件封装:SSM 标准包装:1 |
| 2SC5086Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | SOT-416 |
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