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参数资料
| 型号： | 2SC5089 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-3F1A, SC-59, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 507K |
| 代理商： | 2SC5089 |
2SC5089
2010-02-17
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5089
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
1.5
V
Base current
IB
20
mA
Collector current
IC
40
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 12mg (typ.)
S-MINI
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5089O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 20MA I(C) | SC-59 |
| 2SC5089R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 20MA I(C) | SC-59 |
| 2SC509 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR TO 35V .8A .6W ECB |
| 2SC5090 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type |
| 2SC5090_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type |
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