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参数资料
| 型号： | 2SC5097 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-3J1C, SMQ, 4 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 986K |
| 代理商： | 2SC5097 |
2SC5097
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5097
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.8dB, |S21e|2 = 10dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
1.5
V
Base current
IB
7
mA
Collector current
IC
15
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 6 V, IC = 7 mA
7
10
GHz
S21e
2 (1)
VCE = 6 V, IC = 7 mA, f = 1 GHz
12.5
15.5
Insertion gain
S21e
2 (2)
VCE = 6 V, IC = 7 mA, f = 2 GHz
7
10
dB
NF (1)
VCE = 6 V, IC = 3 mA, f = 1 GHz
1.3
2.5
Noise figure
NF (2)
VCE = 6 V, IC = 3 mA, f = 2 GHz
1.8
3.0
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
(Note 1)
VCE = 6 V, IC = 7 mA
50
160
Output capacitance
Cob
0.5
0.9
pF
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
0.35
0.85
pF
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5097_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
| 2SC5097O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 15MA I(C) | SOT-143VAR |
| 2SC5097R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 15MA I(C) | SOT-143VAR |
| 2SC5098 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC5098O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 15MA I(C) | SOT-143VAR |
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