参数资料
型号: 2SC5108-O
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: 2-2H1A, SSM, 3 PIN
文件页数: 1/6页
文件大小: 190K
代理商: 2SC5108-O
2SC5108
2003-03-24
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5108
For VCO Application
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
3
V
Base current
IB
15
mA
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
0.1
mA
DC current gain
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
80
240
Transition frequency
fT
VCE = 5 V, IC = 5 mA
4
6
GHz
Insertion gain
S21e
2
VCE = 5 V, IC = 5 mA, f = 1 GHz
7
11
dB
Output capacitance
Cob
0.7
pF
Reverse transfer capacitance
Cre
VCB = 5 V, IE = 0, f = 1 MHz
(Note 2)
0.5
0.9
pF
Collector-base time constant
Ccrbb’
VCB = 5 V, IC = 3 mA, f = 30 MHz
5.5
10
ps
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
相关PDF资料
PDF描述
2SC5108-Y UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5108 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5108-O UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5109-Y UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5109-O UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC5108Y 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-236VAR
2SC5108-Y 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:For VCO Application
2SC5108-Y(T5L,F,T) 制造商:Toshiba America Electronic Components 功能描述:VHF/UHF OSCILLATOR 10V SSM 制造商:Toshiba America Electronic Components 功能描述:TRANS RF NPN 10V 1GHZ SSM
2SC5108-Y(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:
2SC5108-Y,LF 功能描述:TRANS RF NPN 10V 1GHZ SSM 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带(CT) 零件状态:停产 晶体管类型:NPN 电压 - 集射极击穿(最大值):10V 频率 - 跃迁:6GHz 噪声系数(dB,不同 f 时的典型值):- 增益:11dB 功率 - 最大值:100mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):120 @ 5mA,5V 电流 - 集电极(Ic)(最大值):30mA 安装类型:表面贴装 封装/外壳:SC-75,SOT-416 供应商器件封装:SSM 标准包装:1