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参数资料
| 型号： | 2SC5155TP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 115K |
| 代理商： | 2SC5155TP |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Low-Frequency
General-Purpose Amplifier, Applications
Ordering number:EN4802
2SC5155
20599HA (KT)/93094TS (KOTO) BX-0950 No.4802–1/4
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0~0.2
2.3
0.6
12
4
3
Package Dimensions
unit:mm
2045B
[2SC5155]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SC5155]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Applications
Various drivers.
Features
High current capacity.
Adoption of MBIT process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO.
2.3
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5155TP-FA | 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5161TLB | 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5165 | 20 A, NPN, Si, POWER TRANSISTOR |
| 2SD1737 | 3.5 A, NPN, Si, POWER TRANSISTOR |
| 2SC5167 | 20 A, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5161 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Voltage Switching Transistor(400V, 2A) |
| 2SC5161A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-263AB |
| 2SC5161B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-263AB |
| 2SC5161TLB | 功能描述:两极晶体管 - BJT NPN 400V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5162 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 2A I(C) | TO-252VAR |
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