参数资料
型号: 2SC5183-T2FB
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SC-59, 4 PIN
文件页数: 1/12页
文件大小: 50K
代理商: 2SC5183-T2FB
1994
DATA SHEET
SILICON TRANSISTOR
2SC5183
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5183-T1
Embossed tape, 8 mm wide,
Pin No. 3 (base) and No. 4 (emitter)
facing the perforations
2SC5183-T2
3 000 units/reel
Embossed tape, 8 mm wide,
Pins No. 1 (collector) and No. 2
(emitter) facing the perforations
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12107EJ2V0DS00 (2nd edition)
(Previous No. TC-2480)
Date Published November 1996 N
Printed in Japan
2.9
±
0.2
2
1
3
4
(1.8)
0.95
0.85
0.6
+0.1
–0.05
0.4
+0.1
–0.05
(1.9)
0.8
0.16
+0.1
–0.06
0~0.1
0.4
+0.1
–0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.4
+0.1
–0.05
5
1.1
+0.2
–0.1
T86
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
PACKAGE DIMENSIONS
(Units: mm)
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