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参数资料
| 型号： | 2SC5183R-T1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-4 |
| 文件页数： | 1/8页 |
| 文件大小： | 95K |
| 代理商： | 2SC5183R-T1 |
1995
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
DATA SHEET
SILICON TRANSISTOR
2SC5183R
Document No. TC-2520
(O. D. No. TC-8076)
Date Published April 1995 P
Printed in Japan
FEATURES
Low noise
NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
4-pin Mini-Mold package
SOT-143 style (Pins for overseas use are assigned to the 2SC5183.)
ORDERING INFORMATION
PART NUMBER
QUANTITY
ARRANGEMENT
2SC5183R-T1
3000 units/reel
Embossed tape, 8 mm wide, pins
No. 3 (emitter) and No. 4 (base)
facing the perforations
2SC5183R-T2
3000 units/reel
Embossed tape, 8 mm wide, pins
No. 1 (emitter) and No. 2 (collector)
facing the perforations
Remark Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-to-base voltage
VCBO
5V
Collector-to-emitter voltage
VCEO
3V
Emitter-to-base voltage
VEBO
2V
Collector current
IC
30
mA
Total power dissipation
PT
90
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–65 to +150
°C
This transistor uses high-frequency technology. Be careful not to allow excessive
current to flow through the transistor, including static electricity.
Electrode assignment
1. Emitter
2. Collector
3. Emitter
4. Base
PACKAGE DRAWINGS
(Units: mm)
2.9±0.2
2
1
3
4
(1.8)
0.85
0.95
0.4
+0.1
–0.05
0.4
+0.1
–0.05
(1.9)
0.8
0.16
+0.1
–0.06
0
to
0.1
0.6
+0.1
–0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.4
+0.1
–0.05
5
1.1
+0.2
–0.1
86T
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5183R-T2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143 |
| 2SC5183T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143R |
| 2SC5183-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5183-T2 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5184 | 制造商:NEC 制造商全称:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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