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参数资料
| 型号： | 2SC5184-T2FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-70, SUPERMINI-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 48K |
| 代理商： | 2SC5184-T2FB |
2
2SC5184
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
ICBO
100
nA
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 1 V, IC = 0
DC Current Gain
hFE
70
140
VCE = 2 V, IC = 20 mA*1
Insertion Power Gain (1)
|S21e|2
7
8.5
dB
VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain (2)
|S21e|2
6
7.5
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz
Noise Figure (1)
NF
1.3
2.0
dB
VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.3
2.0
dB
VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
fT
9
11
GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product (2)
fT
7
9
GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance
Cre
0.4
0.8
pF
VCB = 2 V, IE = 0 mA, f = 1 MHz*2
*1
Measured with pulses: Pulse width
≤ 350
s, duty clcye ≤ 2 %, pulsed.
*2
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
hFE Class
Class
FB
Marking
T86
hFE
70 to 140
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相关代理商/技术参数 |
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|---|---|
| 2SC5185 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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| 2SC5185-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5185-T2 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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