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参数资料
| 型号： | 2SC5185-T2FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 6/12页 |
| 文件大小： | 50K |
| 代理商： | 2SC5185-T2FB |
3
2SC5185
CHARACTERISTICS CURVES (TA = 25 C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
100
0
50
100
150
90 mW
TA - Ambient Temperature - C
P
T
-
Total
Power
Dissipation
-
mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
40
30
20
10
0
0.5
1.0
VCE = 2 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
15
10
5
0
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
Passive Air
Cooling
IC
-
Collector
Current
-
mA
VBE - Base to Emitter Voltage - V
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
1
2
5
10
20
100
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14
1
2
5
10
20
100
14
12
10
8
6
4
2
2 V
VCE = 1 V
f = 2 GHz
12
10
8
6
4
2 V
VCE = 1 V
f = 2 GHz
30
IC - Collector Current - mA
I C - Collector Current - mA
fT
-
Gain
Bandwidth
Product
-
GHz
|S
21e
|2
-
Insertion
Power
Gain
-
dB
IC - Collector Current - mA
h
FE
-
DC
Current
Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
VCE = 2 V
VCE = 1 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5186-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5186-T1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5186FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5191-T2FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5191-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5186 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186(NE68719) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5186T1 | 制造商:NEC 功能描述:New |
| 2SC5186-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
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