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参数资料
| 型号： | 2SC5186-T1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 5/9页 |
| 文件大小： | 171K |
| 代理商： | 2SC5186-T1 |
Data Sheet PU10213EJ01V0DS
3
2SC5186
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
250
200
150
100
90
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.8
0.6
0.4
0.2
02
4
6
10
8
f = 1 MHz
VCE = 2 V
50
40
20
30
10
0
0.5
1.0
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
IB = 20 A
40 A
60 A
80 A
100 A
120 A
140 A
160 A
180 A
200 A
25
20
10
15
5
01
2
34
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
100
200
10
20
50
210
520
50
1
100
VCE = 2 V
1 V
f = 2 GHz
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
5
10
35
7
10
20
2
1
0.7
30
VCE = 2 V
1 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5186-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5187 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1.5A I(C) | SOT-89 |
| 2SC5188 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 |
| 2SC5189 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 |
| 2SC519 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 110V 7A 50W BEC |
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