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参数资料
| 型号： | 2SC5186FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 6/12页 |
| 文件大小： | 48K |
| 代理商： | 2SC5186FB |
3
2SC5186
CHARACTERISTICS CURVES (TA = 25 C)
200 A
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
TA - Ambient Temperature - C
P
T
-
Total
Power
Dissipation
-
mW
0
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
mA
0
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
VBE - Base to Emitter Voltage - V
VCE = 2 V
IC
-
Collector
Current
-
mA
0.5
1.0
50
90 mW
100
200
100
150
20
15
10
5
25
1.0
2.0
3.0
20
10
40
30
50
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
0
Passive air cooling
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
IC - Collector Current - mA
fT
-
Gain
Bandwidth
Product
-
GHz
1
IC - Collector Current - mA
|S
21e
|2
-
Insertion
Power
Gain
-
dB
0
12
3
5
7
10
20
30
5
10
5
10
15
f = 2 GHz
2
3
5
7
10
20
30
VCE = 2 V
VCE = 1 V
VCE = 2 V
VCE = 1 V
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
f = 2 GHz
IC - Collector Current - mA
h
FE
-
DC
Current
Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
VCE = 2 V
VCE = 1 V
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PDF描述 |
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| 2SC5218 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5288-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5369 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5454-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5186T1 | 制造商:NEC 功能描述:New |
| 2SC5186-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5187 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1.5A I(C) | SOT-89 |
| 2SC5188 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 |
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