参数资料
型号: 2SC5194-T2FB-A
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: COMPACT, MINIMOLD PACKAGE-4
文件页数: 1/10页
文件大小: 56K
代理商: 2SC5194-T2FB-A
1994
DATA SHEET
SILICON TRANSISTOR
FEATURES
PACKAGE DRAWINGS
Low Voltage Operation, Low Phase Distortion
(Unit: mm)
Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
IC = 100 mA
4-Pin Compact Mini Mold Package
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5194-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation
side of the tape.
2SC5194-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
2SC5194
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
2.1±0.2
1.25±0.1
2.0±0.2
0.65
3
T88
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0.60
(1.25)
0.3
–0.05
+0.1
1
2
+0.1
0.3
–0.05
+0.1
0.15
–0.05
+0.1
0.3
0.9±0.1
0
to
0.1
(1.3)
0.3
–0.05
4
0.4
–0.05
+0.1
Document No. P10397EJ2V0DS00 (2nd edition)
(Previous No. TD-2487)
Date Published August 1995 P
Printed in Japan
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相关代理商/技术参数
参数描述
2SC5195 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
2SC5195(NE68819) 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete
2SC5195-T1 制造商:NEC Electronics Corporation 功能描述:
2SC5196 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
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