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参数资料
| 型号： | 2SC5195-T1FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SUPERCOMPACT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 54K |
| 代理商： | 2SC5195-T1FB-A |
1994
DATA SHEET
SILICON TRANSISTOR
FEATURES
PACKAGE DRAWINGS
Low Voltage Operation, Low Phase Distortion
(Unit: mm)
Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
IC = 100 mA
Supercompact Mini Mold Package
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5195
In-bulk products
Embossed tape 8 mm wide.
(50 pcs.)
Pin 3 (Collector) face to perforation side of
2SC5195-T1
Taped products
the tape.
(3 Kpcs/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
PT
125
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
2SC5195
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
1.6±0.1
88
0.15
–0.05
+0.1
0.6
2
0.75±0.05
1.0
0.5
1
0.3
–0
+0.1
3
+0.1
0
to
0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.2
–0
1.6±0.1
0.8±0.1
Document No. P10398EJ2V0DS00 (2nd edition)
(Previous No. TD-2488)
Date Published August 1995 P
Printed in Japan
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