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参数资料
| 型号： | 2SC5199 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 封装： | 2-21F1A, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 122K |
| 代理商： | 2SC5199 |
2SC5199
2004-07-07
3
Collector current IC (A)
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
a
t)
(
V
)
VCE (sat) – IC
Collector-emitter voltage VCE (V)
IC – VCE
Co
lle
ct
or
cu
rr
en
t
I
C
(
A
)
IC – VBE
Collector current IC (A)
hFE – IC
DC
cur
re
nt
gain
h
FE
Base-emitter voltage VBE (V)
C
ollect
or
c
urre
nt
I C
(
A
)
Collector-emitter voltage VCE (V)
Coll
ect
or
cur
re
nt
I
C
(A
)
Safe Operating Area
10
6
4
2
0
Common emitter
VCE = 5 V
8
0.8
1.2
1.6
0.4
0
2.0
Tc = 100°C
25°C
100
10
0.1
1
Common emitter
VCE = 5 V
0.01
1000
10
Tc = 100°C
Tc = 25°C
200
10
6
4
2
0
IB = 10 mA
20
Common emitter
Tc = 25°C
8
4
6
8
2
0
10
30
40
50
100
150
250
10
1
0.1
0.01
0.1
1
10
Common emitter
IC/IB = 10
100
Tc = 100°C
Tc = 25°C
0.05
2
30
1
10
30
100
300
0.5
3
5
10
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
0.3
0.1
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5199_04 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5199O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 12A I(C) | TO-264AA |
| 2SC5199-O(Q) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 160V 12A 30MHz TO-3P(L) |
| 2SC5199R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 12A I(C) | TO-264AA |
| 2SC5199-R(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 160V 12A 3-Pin TO-3PL |
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