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参数资料
| 型号： | 2SC5251 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3PFM(N), 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 35K |
| 代理商： | 2SC5251 |
2SC5251
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
1500
V
Collector to emitter voltage
V
CEO
800
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
12
A
Collector peak current
I
C(peak)
24
A
Collector power dissipation
P
C*
1
50
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
800
—
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
6—
—
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CES
—
500
A
V
CE = 1500 V, RBE = 0
DC current transfer ratio
h
FE1
8—
35
V
CE = 5 V, IC = 1 A
DC current transfer ratio
h
FE2
5—
9
V
CE = 5 V, IC = 5 A
Collector to emitter saturation
voltage
V
CE(sat)
——5
V
I
C = 7 A, IB = 1.8 A
Base to emitter saturation
voltage
V
BE(sat)
—
1.5
V
I
C = 7 A, IB = 1.8 A
Fall time
t
f
—
0.2
0.4
sec
I
CP = 6 A, IB1 = 1.5 A,
f
H = 31.5 kHz
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PDF描述 |
|---|---|
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| 2SC5256R | RF SMALL SIGNAL TRANSISTOR |
| 2SC5256O | RF SMALL SIGNAL TRANSISTOR |
| 2SC5257O | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5252 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused Planar |
| 2SC5254 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC5254O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 40MA I(C) | SOT-23 |
| 2SC5254R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 40MA I(C) | SOT-23 |
| 2SC5255 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND SOW NOISE AMPLIFIER APPLICATIONS) |
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