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参数资料
| 型号： | 2SC5276 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CP4, 4 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 81K |
| 代理商： | 2SC5276 |
No.5186–2/5
2SC5276
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Continued from preceding page.
ITR08034
Cob -- VCB
f=1MHz
ITR08035
Cre -- VCB
f=1MHz
f=1GHz
100
10
ITR08032
hFE -- IC
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ITR08033
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fT -- IC
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ITR08036
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2 -- IC
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ITR08037
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S21e
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Collector Current, IC –mA
Collector-to-Base Voltage, VCB –V
Output
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Cob
–
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Collector-to-Base Voltage, VCB –V
Reverse
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Forward
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Gain,
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Forward
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Collector Current, IC – mA
Collector Current, IC –mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5277 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:UHF to S Band Low-Noise Amp, OSC Applications |
| 2SC5277A | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:UHF to S-Band Low-Noise Amplifier OSC Applications |
| 2SC5277A_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:UHF to S-Band Low-Noise Amplifier OSC Applications |
| 2SC5277A-2-TL-E | 功能描述:两极晶体管 - BJT BIP NPN 30MA 10V FT=8G RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5277D1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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