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参数资料
| 型号： | 2SC5288-T1KB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-61, 4 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 164K |
| 代理商： | 2SC5288-T1KB-A |
DATA SHEET
SILICON TRANSISTOR
The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
P–1 = 24 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5288-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark
To order evaluation samples, contact your nearby sales office.
(Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
6.0
V
Emitter to Base Voltage
VEBO
2.0
V
Collector Current
IC
150
mA
Total Power Dissipation
PT
200 (CW)
mW
1.0 (duty = 1/8)Note
W
2.5 (duty = 1/24)Note
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
Note Pulse period is 10 msec or less.
2SC5288
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
PACKAGE DRAWING
(Unit: mm)
(1.9)
(1.8)
0.85
0.95
0.4
+0.1
–
0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
2
3
1
4
2.9±0.2
0.4
+0.1
–
0.05
0.4
+0.1
–
0.05
T-89
0.6
+0.1
–
0.05
1.1
+0.2
–
0.1
0.8
0.16
+0.1
–
0.06
0
to
0.1
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. PU10039EJ01V0DS (1st edition)
(Previous No. P10249EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
NEC Corporation 1995
NEC Compound Semiconductor Devices 2001
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The mark
shows major revised points.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5289-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5295GR | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5295GQ | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5295G | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5347AF | RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5289 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5289(NE69039) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5289T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 300MA I(C) | SOT-143R |
| 2SC5289-T1-A-KB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5291 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
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