参数资料
型号: 2SC5291R
元件分类: 功率晶体管
英文描述: 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR
封装: FLP-3
文件页数: 1/4页
文件大小: 27K
代理商: 2SC5291R
2SC5291
No.5282-1/4
Features
Adoption of FBET, MBIT processes.
Large current capacity.
Can be provided in taping.
9.5mm onboard mounting height.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
180
V
Collector-to-Emitter Voltage
VCEO
160
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
1.5
A
Collector Current (Pulse)
ICP
2.5
A
Base Current
IB
300
mA
Collector Dissipation
PC
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=120V, IE=0
1.0
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
1.0
A
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5282A
2SC5291
High-Voltage Switching Applications
Package Dimensions
unit : mm
2084B
[2SC5291]
12201 TS IM TA-0376
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
10.5
1.2
1.6
0.5
2.5
4.5
1.2
1.4
2.6
8.5
1.0
7.5
1.9
0.5
12
3
相关PDF资料
PDF描述
2SC5291 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR
2SC5291T 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR
2SC5291R 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR
2SC5297 8 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC5303 25 A, 800 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SC5291S 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP
2SC5291S-AY 功能描述:两极晶体管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5291T 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP
2SC5294 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For horizontal deflection output
2SC5294A 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For horizontal deflection output