参数资料
型号: 2SC5291T
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 功率晶体管
英文描述: 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR
封装: FLP-3
文件页数: 2/4页
文件大小: 27K
代理商: 2SC5291T
2SC5291
No.5282-2/4
ITR08047
IC -- VBE
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.4
0.8
1.2
1.6
VCE=5V
100
1000
10
ITR08048
hFE -- IC
35
3
72
0.1
7
35
2
0.01
72
1.0
2
3
5
7
5
7
2
3
VCE=5V
T
a=75
°C
25
°C
--25
°C
Ta=75°C
25°C
--25°C
ITR08045
ITR08046
IC -- VCE
012
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IB=0
50mA
40mA
30mA
20mA
10mA
5mA
2mA
1mA
IC -- VCE
010
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
IB=0
5.0mA
4.0mA
3.5mA
3.0mA
2.5mA
1.5mA
0.5mA
4.5mA
2.0mA
1.0mA
Collector
Current,
I
C
--
A
Collector
Current,
I
C
--
A
Collector
Current,
I
C
--
A
DC
Current
Gain,
h
FE
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1VCE=5V, IC=100mA
100
400
hFE2VCE=5V, IC=10mA
90
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
120
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
14
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
0.13
0.45
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
0.85
1.2
V
Turn-ON Time
ton
See specified Test Circuit
4.0
ns
Storage Time
tstg
See specified Test Circuit
1.2
s
Fall Time
tf
See specified Test Circuit
8.0
ns
* : The 2SC5291 is classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200 140 to 280 200 to 400
Switching Time Test Circuit
PW=20
s
D.C.=
≤1%
INPUT
VCC=100V
50
RB
IB1
IB2
100
F
470
F
VBE= --5V
VR
+
RL
OUTPUT
10IB1=--10IB2=IC=700mA
RL=140, RB=14 at IC=700mA
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