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参数资料
| 型号： | 2SC5295JQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SSMINI3-F1, SC-89, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 199K |
| 代理商： | 2SC5295JQ |
Transistors
1
Publication date: December 2002
SJC00283BED
2SC5295J
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Features
High transition frequency f
T
Low collector output capacitance (Common base, input open cir-
cuited) Cob
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 01
A
Forward current transfer ratio *
hFE
VCE = 8 V, IC = 20 mA
50
170
Transition frequency
fT
VCE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
7.0
8.5
GHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
0.6
1.0
pF
(Common base, input open circuited)
Foward transfer gain
S
21e
2
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
7
9
dB
Maximum unilateral power gain
GUM
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
10
dB
Noise figure
NF
VCE
= 8 V, I
C
= 7 mA, f = 1.5 GHz
2.2
3.0
dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
2V
Collector current
IC
65
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Marking Symbol: 3S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
50 to 120
100 to 170
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0
to
0.02
0.10
max.
0.70
+0.05 –0.03
(0.375)
5
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5295Q | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 |
| 2SC5295R | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 |
| 2SC5295S | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 |
| 2SC5296 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC5297 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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