参数资料
型号: 2SC5307
元件分类: 小信号晶体管
英文描述: 50 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-5K1A, SC-62, 3 PIN
文件页数: 1/4页
文件大小: 131K
代理商: 2SC5307
2SC5307
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5307
High Voltage Switching Applications
High breakdown voltage: VCEO = 400 V
Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 mA, IB = 0.5 mA)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
400
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
50
Collector current
Pulse
ICP
100
mA
Base current
IB
25
mA
Ta = 25°C
500
Collector power
dissipation
Ta = 25°C
(Note 1)
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
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