参数资料
型号: 2SC5376CT-B
元件分类: 小信号晶体管
英文描述: 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: CST3, 2-1J1A, 3 PIN
文件页数: 1/3页
文件大小: 137K
代理商: 2SC5376CT-B
2SC5376CT
2010-04-18
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5376CT
General Purpose Amplifier Applications
Switching and Muting Switch Applications
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC (Note1)
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1 : Mounted on FR4 board (10 mm
× 10 mm × 1 mm)
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
12
0.
25
±
0
.0
3
1
.0±
0.
0
5
0.
65
±
0
.0
2
0.35±0.02
0.15±0.03
0.
2
0
.0
3
0.5±0.03
0.6±0.05
0.
3
8
+0
.02
-0
.03
0.05±0.03
0.
0
0
.0
3
CST3
1.BASE
2.EMITTER
3.COLLECTOR
Type Name
7J
1
3
2
hFE Rank
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